Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing β-Ga2O3 Layers

The development of growth processes for the synthesis high-quality epitaxial layers is one requirements utilizing ultrawide band gap semiconductor Ga2O3 high-voltage, high-power electronics. A halide vapor phase epitaxy (HVPE) process used to grow β-Ga2O3 layer was optimized by modifying gas inlet, resulting in improved uniformity. conventional tube acting as an inlet Ga precursor GaCl replaced with a shower head four outlets at 45 degrees horizontal axis reactor. modification performed based on numerical calculations three-dimensional distribution gases inside chamber different designs inlet. It shown that variation Ga/O ratio over substrate holder ~10% compared ~40% tube. In addition, leads film thickness varying factor ~4 depending position holder, whereas when using head, grown became much more uniform total spread just ~30% entire holder.